By Lucia Romano, Vittorio Privitera, Chennupati Jagadish
This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to provide an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit according to electric or mechanical fields.
The quantity comprises chapters focusing in particular on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and masses extra. it is going to aid aid scholars and scientists of their experimental and theoretical paths.
- Expert contributors
- Reviews of crucial fresh literature
- Clear illustrations
- A extensive view, together with exam of defects in numerous semiconductors
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Extra info for Defects in Semiconductors, Volume 91
100, 113714. , 2006b. A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si: As and Si:B and usage in device simulation. J. Appl. Phys. 100, 113715. , 1978. Boron in near-intrinsic ‹100› and ‹111› silicon under inert and oxidizing ambients—diffusion and segregation. J. Electrochem. Soc. 125, 813–819. , 1984. HREM of SiP precipitates at the (111) silicon surface during phosphorus predeposition. Ultramicroscopy 14, 97–106. , 1989.
1987). From these measurements it was concluded that the donor level of the boron interstitial is located above the acceptor level so that these levels are in negative-U ordering. Accordingly, the neutral charge state should not be stable. On the other hand, based particularly on the work of De Salvador et al. (2006, 2010), the current understanding of boron diffusion in silicon is that it proceeds predominantly via neutral pairs with self-interstitials. Under intrinsic conditions, the neutral pairs form by a reaction of substitutional boron atoms with neutral self-interstitials and the subsequent reaction with a hole.
1989. A model for phosphorus segregation at the silicon-silicon dioxide interface. Appl. Phys. A 49, 671–675. , 1991. Parameters for point-defect diffusion and recombination. IEEE Trans. Comput. Aided Des. 10, 1125–1131. , 1961. Diffusion of charged particles into a semiconductor under consideration of the built-in field. Solid State Electron. 3, 45–50. , 1981. The growth of oxidation stacking faults and the point defect generation at Si-SiO interface during thermal oxidation of silicon. J. Electrochem.