Bonding in Microsystem Technology (Springer Series in by Jan A. Dziuban

By Jan A. Dziuban

This is often the 1st compendium on silicon/glass microsystems made by means of deep rainy etching and the 1st publication with a close description of bonding recommendations utilized in microsystem know-how. Technological effects provided within the e-book were established experimentally through the writer and his staff, and will be used in day by day laboratory perform. distinctive recognition has been paid to the top point of accessibility of the e-book by way of scholars.

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Extra resources for Bonding in Microsystem Technology (Springer Series in Advanced Microelectronics)

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In the Fig. 21. Anisotropic electrochemical etching of silicon ATE, a) three-electrode configuration, b) four-electrode configuration (distribution of potential has been given). g. HF–H O, can also be carried 2 out in similar assemblies. Bonding in Microsystem T echnology 41 Fig. 22. Theoretical (a) and experimental (b) voltmetric curve I= f (V ) for n- and p-type silicon [97]. controlled etch-stop mode current flows in the circuit, the polarization is kept in the range in which p-type material is etched, while n-type material remains non-etched.

2. E2MSi etching Experimental works on EMSi etching have shown that the increased reactivity of etching alkali solution exposed to microwave remains for a dozen or so seconds after the exposure (Fig. 31). This is a surprising result. It should be concluded that effects of microwave irradiation are ‘‘stored’’, ‘‘memorized’’ by a solution for quite a long time, which appears to be a phenomenon not known in science until now. This phenomenon has been applied in a new variant of microwave-enhanced silicon etching, called E2MSi (Extended Etching Microwave Silicon) [110], in which the microwave irradiation (excitation) of KOH and etching of silicon substrates have been separated in time and space.

50 Chapter 3 cooled down. As a result of such treatment, anisotropically etched, 6 mm-deep cavities were obtained. 2 mm/min. Sidewalls 100 of each of the cavities were formed by easily observable crystallographic planes (111) angled at 90° (Fig. 30b). The (100) surface of the bottom of the cavity was not smooth, and resembled the surface attained in thermally activated 3M KOH at 70°C. This spectacular experimental result shows unambiguously that microwave irradiation leads to the generation of hydroxyl groups in deionized water, which anisotropically etch silicon.

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