By G. W. A. Dummer, J. Mackenzie Robertson
American Microelectronics information Annual 1964-65 offers entire details on diversified microelectronics to be had within the U.S.
summary: American Microelectronics information Annual 1964-65 offers entire info on diverse microelectronics on hand within the U.S
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Additional info for American microelectronics data annual. 1964-65
Swamping resistors inserted in series with the output load shortens the recovery time. The transformers give a cur rent step-up of two or three to one. With transistor drive circuits of nominal collector voltages, no large value swamping resistor can be inserted into the transformer. load circuit. A high conductance diode in the output cir cuit acts as a variable swamping resistor and in effect shortens the transformer recovery time. Diodes such as Clevite CTP 309, National Transistor IN3298 or Rheem RH 750 are well suited for this function.
0 Volts Electrical Characteristics (25°C unless otherwise noted) (Note 4): SYMBOL CHARACTERISTIC CONDITIONS I = 5. o mA; c V 5. 0 V CE 1TE DC Current Gain (Note 5) V (sat) BE Base Saturation Voltage V (sat) CE Collector Saturation Voltage ht e High Frequency Current Gain f = 100 me (Note 3 ) 1 = 5. o mA; c V = 5. 0 V CE c ob Output Capacitance 'E: = O; C Emitter Transition Capacitance TE = MIN TYP 30 75 I = 5. o mA; c I 0. 5 mA B 0. 73 mA; mA 0. 25 = I = 5. o c IB = 0. 5 3. 0 = 5. 0 V V CB CC I Isolation Capacitance BVC IO Collector-to-Isolation Breakdown Voltage I = O·, c VEB = 1.
Attempts to obtain greater operating speeds by using smallar cores requiring less driver power have met with basic difficulties with respect to the practicability and cost of- inter wiring the small elements. For some time, deposited magnetic thin films have been thought to offer a promising answer to the need for higher speed memory systems. However, problems of uniformity have made the commercial applica tion of these devices impossible. By the utilization of new techniques in vacuum deposition, the Burroughs Corporation has been able to successfully produce thin film memory planes on a commercial basis.