American microelectronics data annual. 1964-65 by G. W. A. Dummer, J. Mackenzie Robertson

By G. W. A. Dummer, J. Mackenzie Robertson

American Microelectronics information Annual 1964-65 offers entire details on diversified microelectronics to be had within the U.S.

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Swamping resistors inserted in series with the output load shortens the recovery time. The transformers give a cur­ rent step-up of two or three to one. With transistor drive circuits of nominal collector voltages, no large value swamping resistor can be inserted into the transformer. load circuit. A high conductance diode in the output cir­ cuit acts as a variable swamping resistor and in effect shortens the transformer recovery time. Diodes such as Clevite CTP 309, National Transistor IN3298 or Rheem RH 750 are well suited for this function.

0 Volts Electrical Characteristics (25°C unless otherwise noted) (Note 4): SYMBOL CHARACTERISTIC CONDITIONS I = 5. o mA; c V 5. 0 V CE 1TE DC Current Gain (Note 5) V (sat) BE Base Saturation Voltage V (sat) CE Collector Saturation Voltage ht e High Frequency Current Gain f = 100 me (Note 3 ) 1 = 5. o mA; c V = 5. 0 V CE c ob Output Capacitance 'E: = O; C Emitter Transition Capacitance TE = MIN TYP 30 75 I = 5. o mA; c I 0. 5 mA B 0. 73 mA; mA 0. 25 = I = 5. o c IB = 0. 5 3. 0 = 5. 0 V V CB CC I Isolation Capacitance BVC IO Collector-to-Isolation Breakdown Voltage I = O·, c VEB = 1.

Attempts to obtain greater operating speeds by using smallar cores requiring less driver power have met with basic difficulties with respect to the practicability and cost of- inter­ wiring the small elements. For some time, deposited magnetic thin films have been thought to offer a promising answer to the need for higher speed memory systems. However, problems of uniformity have made the commercial applica­ tion of these devices impossible. By the utilization of new techniques in vacuum deposition, the Burroughs Corporation has been able to successfully produce thin film memory planes on a commercial basis.

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