Advances in Photovoltaics: Part 3, by Gerhard P. Willeke, Eicke R. Weber

By Gerhard P. Willeke, Eicke R. Weber

This quantity is the 3rd of a suite of 7 with regards to photovoltaics. sunlight cell-related applied sciences coated the following comprise: ribbon silicon; heterojunction crystalline silicon; wafer identical crystalline silicon; and different complex silicon sun telephone constructions and processes.

Semiconductors and Semimetals has unusual itself in the course of the cautious number of recognized authors, editors, and individuals. initially well known because the "Willardson and Beer" sequence, it has succeeded in publishing various landmark volumes and chapters. The sequence publishes well timed, hugely correct volumes meant for long term effect and reflecting the really interdisciplinary nature of the sector. The volumes in Semiconductors and Semimetals were and may remain of significant curiosity to physicists, chemists, fabrics scientists, and machine engineers in academia, medical laboratories and sleek industry.

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5, a slightly higher nSiN would be optimum for solar cells in module application. With Eqs. 5g spectrum) should be minimized. Apart from the ARC effect, SiNx:H is also suited for surface passivation of the n++ P-doped emitter. , 2012). 11 This surface passivation mechanism is referred to as field effect passivation in contrast to chemical passivation, where the reconstruction of chemical bonds lowers the density of energy levels in the bandgap. Chemical passivation is also present for SiNx:H layers, but remaining defect densities are usually higher than for SiO2 layers, which in turn have a lower density of fixed charges.

J0e should be low enough to allow for high Voc values (see Eq. 24)19 • Rsheet should be low enough to provide good conductivity for lateral carrier transport toward the grid fingers • Surface concentration of P atoms should be high enough to allow contacting of the emitter via Ag paste • Surface concentration of P atoms and dead layer thickness should be low enough to minimize Auger recombination and increase blue response20 An optimization of emitter quality is therefore not a straightforward task, as the requirements listed above point in different directions.

6. 15 Phase diagram of Al/Si (top) with characteristic stages during rear side contact firing (bottom). Al/Si data from Krause et al. (2011) and solubility data from Murray and McAlister (1984) and Yoshikawa and Morita (2003). After Huster (2005). temperature. This accounts for the p+ doping of the recrystallized Si layer in the range of 1018–1019 per cm3, the BSF. The recrystallization stops when the temperature of the melt reaches the eutectic point at 577  C. The solidified Al/Si melt then has eutectic composition with 12% Si.

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