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A thru-only de-embedding method for on-wafer characterization of multiport networks (a) G 1 S G 3 S G 23 (b) G S 2 300µm G S 4 G Fig. 9. (a) Micrograph of a THRU with GSGSG pads. (b) A pair of 1 mm-long TLs with the same pads. 6 µm. Nominal differential characteristic impedance is 100 Ω. 18-µm CMOS process. 5. De-embedding of 4-port with even/odd symmetry Suppose a 4-port under measurement can be represented as a cascade of three four-ports, as shown in Fig. 8(a). Then, its transfer matrix can be written as Tmeas = TL Tdut TR .
7, pp. 1530–1539. Daniel, E. , Harff, N. , Schreiber, S. , and Gilbert, B. K. (2004). Network analyzer measurement de-embedding utilizing a distributed transmission matrix bisection of a single THRU structure, 63rd ARFTG Conference, pp. 61–68. Faria, J. A. B. (2004). A new generalized modal analysis theory for nonuniform multiconductor transmission lines, IEEE Transactions on Power Systems, vol. 19, no. 2, pp. 926–933. , Natsukari, Y. , and Fujishima, M. (2008). New on-chip de-embedding for accurate evaluation of symmetric devices, Japanese Journal of Applied Physics, vol.